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inchange semiconductor product specification silicon npn power transistors 3DD7D description with to-3 package high power dissipation applications power amplifier low-speed switching power regulator pinning pin description 1 base 2 emitter 3 collector absolut maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 5 v i c collector current 7.5 a p c collector power dissipation t c =75 75 w t j junction temperature -55~175 t stg storage temperature -55~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.33 /w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 3DD7D characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =3ma ; i b =0 200 v v (br)cbo collector-base breakdown voltage i c =3ma ; i e =0 250 v v (br)ebo emitter-base breakdown voltage i e =2ma ; i c =0 5 v v ce(sat) collector-emitter saturation voltage i c =3.75a ;i b =0.38 a 1.2 v i ceo collector cut-off current v ce =30v; i b =0 1.0 ma h fe dc current gain i c =3.75a ; v ce =10v 15 180 ? h fe classifications 15-25 25-40 40-55 55-80 80-120 120-180
inchange semiconductor product specification 3 silicon npn power transistors 3DD7D package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm)

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